Samsung S5PC100, Руководство пользователя

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ELECTRICAL DATA S5PC100 USER’S MANUAL (REV1.0)
12.1-6
Table 12.1- 6 Special Memory DDR I/O PAD DC Electrical Characteristics (Memory Port 1)
Symbol Parameter Min Typ Max Unit
VDDm1 Output supply voltage for LPDDR2 1.15 1.2 1.25 V
VDDm1 Output supply voltage for LPDDR1 1.7 1.8 1.9 V
VDD_INT
NT
Internal Voltage 1.15 1.2 1.25 V
Temp Ambient Temperature -25 25 85
°
C
V
IH
dc Input Logic High 0.7 * VDDm1 - VDDm1+0.3 V
V
IL
dc Input Logic Low -0.3 - 0.3 * VDDm1 V
I
IH
High Level Input Current -10 - 10 uA
I
IL
Low Level Input Current -10 - 10 uA
High Level Input Current with Pull Down
(VDD=2.5V)
10 40 80 uA
I
IH
High Level Input Current with Pull Down
(VDD=1.8V)
5 20 40 uA
Low Level Input Current with Pull Up
(VDD=2.5V)
-80 -40 -10 uA
I
IL
Low Level Input Current with Pull Up
(VDD=1.8V)
-40 -20 -5 uA
V
OH
Output High Voltage(@Ioh=-100uA) VDDm1 – 0.2 - - V
V
OL
Output Low Voltage(@Iol=100uA) - - 0.2 V
Table 12.1- 7 USB DC Electrical Characteristics
Symbol Parameter Condition Min Max Unit
V
IH
High level input voltage
2.0 V
V
IL
Low level input voltage
0.8 V
I
IH
High level input current Vin = 3.3V
-10 10
μ
A
I
IL
Low level input current Vin = 0.0V
-10 10
μ
A
V
OH
Static Output High 15Kohm to
GND
2.8 3.6 V
V
OL
Static Output Low 1.5Kohm to
3.6V
0.3 V