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2 CMOS
2.18 Id-Vg pulse: Id-Vg characteristics, SMU Pulse (A.01.12)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Measures the drain current vs gate voltage characteristics of MOSFET by using SMU pulse.
[Device Under Test]
MOSFET, 4 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
Gate: SMU connected to Gate terminal, primary sweep voltage output
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
Drain: SMU connected to Drain terminal, constant voltage output
Vd: Drain voltage
PulsePeriod: Pulse period
PulseWidth: Pulse width
Subs: SMU connected to Substrate, secondary sweep voltage output
VsubsStart: Sweep start voltage for Substrate terminal
VsubsStop: Sweep stop voltage for Substrate terminal
VsubsStep: Sweep step voltage for Substrate terminal
Source: SMU connected to Source terminal, constant voltage output
[Extended Test Parameters]
Vs: Source voltage
BaseValue: Pulse base voltage
IgLimit: Gate current compliance
IsubsLimit: Substrate current compliance
HoldTime: Hold time
DelayTime: Delay time
[Measurement Parameters]
Drain current Idrain
[User Function]
IdrainPerWg: Drain current per unit gate width IdrainPerWg=Idrain/Wg
gm: Transconductance gm=diff(Idrain,Vgate)
gmPerWg: Transconductance per unit gate width gmPerWg=diff(IdrainPerWg,Vgate)
[X-Y Plot]
X axis: Gate voltage Vgate (LINEAR)
Y1 axis: Drain current Idrain (LINEAR)
Y2 axis: Transconductance gm (LINEAR)
[List Display]
Drain current per unit gate width IdrainPerWg
Transconductance per unit gate width gmPerWg
Agilent EasyEXPERT Application Library Reference, Edition 8
2-31