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6 Memory
6.5
NandFlash2 Endurance: NAND flash memory cell endurance test (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Performs the endurance test for the NAND type flash memory cell and plots the number of write/erase
operation vs threshold voltage characteristics.
[Device Under Test]
NAND-type flash memory cell
Connect the Control Gate to the ASU1 Output, and the Drain to the ASU2 Output.
Open the Floating Gate, and connect the other terminals to the ASU3 Output.
[Required Modules and Accessories]
Agilent 81110A pulse generator (2-output, PGU1 and PGU2) 1 unit
HRSMU/ASU 3 sets (ASU1, ASU2, and ASU3)
ASU1 connections: Output: Control Gate, SMU: HRSMU, AUX: PGU1
ASU2 connections: Output: Drain, SMU: HRSMU, AUX: PGU2
ASU3 connections: Output: Source and Substrate, SMU: HRSMU, AUX: PGU2
Setting of ASU I/O Path, ASU tab, Configuration window: AUX
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, constant voltage output
Source: SMU connected to Source and Substrate terminals, constant voltage output
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
Vd: Drain voltage
Id@Vth: Drain current to decide the Vth
IntegTime: Integration time
TotalWriteAndEraseCycles: Total number of write/erase operation
WritePulsePeriod: Write pulse period
WritePulseDelay: Write pulse delay
WritePulseWidth: Write pulse width
WriteLeadingTime: Write pulse leading edge transition time
WriteTrailingTime: Write pulse trailing edge transition time
Vwrite: Write pulse output level
ErasePulsePeriod: Erase pulse period
ErasePulseDelay: Erase pulse delay
ErasePulseWidth: Erase pulse width
EraseLeadingTime: Erase pulse leading edge transition time
EraseTrailingTime: Erase pulse trailing edge transition time
Verase: Erase pulse output level
[Extended Test Parameters]
Agilent EasyEXPERT Application Library Reference, Edition 8
6-13
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...