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18 WGFMU
18.6 TRANSIV DC IdVg: Id-Vg characteristics, using RSU (A.03.20)
[Supported Analyzer]
B1500A
[Description]
Measures the drain current vs gate voltage characteristics of MOSFET.
[Device Under Test]
MOSFET, 3 or 4 terminals
Drain and gate must be connected to SMU through RSU.
Source and substrate must be connected to WGFMU ground which is the outer conductor of the RSU Output
terminals used for Drain and Gate.
[Required Modules and Accessories]
Agilent B1530A WGFMU 1 unit
Agilent B1531A RSU 2 set
[Device Parameters]
Polarity: Nch (SMU forces specified value) or Pch (SMU forces negative specified value)
L: Gate length
W: Gate width
Temp: Temperature (deg C)
IdLimit: Drain current compliance
[Test Parameters]
Gate: SMU connected to Gate terminal, primary sweep voltage output
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
Drain: SMU connected to Drain terminal, secondary sweep voltage output
VdStart: Sweep start voltage for Drain terminal
VdStop: Sweep stop voltage for Drain terminal
VdStep: Sweep step voltage for Drain terminal
[Extended Test Parameters]
IgLimit: Gate current compliance
IntegTime: Integration time
HoldTime: Hold time
DelayTime: Delay time
[Measurement Parameters]
Drain current Id
[User Function]
IdPerW: Drain current per unit gate width IdPerW=Id/W
[X-Y Plot]
X axis: Gate voltage Vg (LINEAR)
Y1 axis: Drain current Id (LINEAR)
[List Display]
Gate voltage Vg
Drain voltage Vd
Drain current Id
Drain current per unit gate width IdPerW
Agilent EasyEXPERT Application Library Reference, Edition 8
18-12