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15 Structure
15.18
QSCV[2]: C-Vg, Ig-Vg (2-terminal) (A.03.00)
[Supported Analyzer]
B1500A, B1505A, 4155B, 4155C, 4156B, 4156C
[Description]
Measures the oxide film capacitance of a MOSFET by using the quasi-static CV method, and plots the C-V
characteristics.
To obtain the measurement data after the capacitance offset cancel, perform the QSCV C Offset Meas
application test before this test.
[Device Under Test]
MOS capacitance, 2 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force negative specified value)
Lg: Gate length
Wg: Gate width
Temp: Temperature
[Test Parameters]
Gate: SMU connected to Gate terminal, primary sweep (QSCV) voltage output
Subs: SMU connected to Substrate terminal, constant voltage output
IMeasSMU: SMU to measure current and capacitance, connected to Gate terminal or Substrate terminal
Vstart: Sweep start voltage
Vstop: Sweep stop voltage
Vstep: Sweep step voltage
QSCVMeasV: QSCV measurement voltage
I_Comp: Current compliance
LeakCompen: Leakage current compensation on/off
MeasRange: Current measurement range used for the QSCV measurement, fixed range
Integ_C: Integration time for the capacitance measurement
Integ_L: Integration time for the leakage current measurement
HoldTime: Hold time
DelayTime: Delay time
IOffsetCancel: QSCV smart operation enable/disable
IOffsetSink: SMU to perform QSCV smart operation, connected to terminal which connected to IMeasSMU
QSCV smart operation is effective for QSCV measurements with a large leakage current. The SMU set as the
IOffsetSink performs the current force operation to minimize the measurement error caused by an offset current.
[Extended Test Parameters]
StepDelay: Step delay time
OutputRange: Ranging type for voltage output
SwpMode: Sweep mode
VCompSinkSMU: Voltage compliance of SMU for QSCV smart operation
Cmin: Minimum capacitance value for graph
Cmax: Maximum capacitance value for graph
IgMin: Minimum leakage current value for graph
IgMax: Maximum leakage current value for graph
Agilent EasyEXPERT Application Library Reference, Edition 8
15-32
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...