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11 Reliability
11.33
TDDB Istress: TDDB Test, current stressed (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Performs the TDDB (time dependent dielectric breakdown) test, and plots the stress time vs voltage
characteristics. This test is performed by the sampling measurement mode.
[Device Under Test]
MOS capacitor, insulator, oxide layer, and so on
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
L: Port1 terminal length
W: Port1 terminal width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
TotalStressTime: Total stress time. 10 to 10000 seconds.
NoOfSamples: Number of samples
Port1: SMU connected to Port1 terminal
I1Stress: Port1 stress current
Port2: SMU connected to Port2 terminal
[Extended Test Parameters]
V2: Port2 terminal voltage
V1Limit: Port1 voltage compliance
I2Limit: Port2 current compliance
HoldTime: Hold time
Port2MinRng: Minimum range for the port2 current measurement
[User Function]
I1PerArea=Iport1/L/W
I2PerArea=Iport2/L/W
[Test Output: X-Y Graph]
X axis: Stress time TimeList (LOG)
Y1 axis: Port1 terminal voltage Vport1List (LINEAR)
[Test Output: List Display]
Stress time TimeList
Port1 terminal voltage Vport1List
[Test Output: Parameters]
Breakdown voltage Vbd
Time to breakdown Tbd
Charge to breakdown Qbd
[Qbd calculation]
Qbd=I1Stress*Tbd/L/W
Agilent EasyEXPERT Application Library Reference, Edition 8
11-78
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...