
15 Structure
15.3
Cgb-Freq[2] Log: Cgb-f characteristics, 2 terminals (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Measures MOS capacitor's characteristics of gate-to-substrate capacitance (Cgb, linear) vs frequency (f, log).
The measurement frequency is 10 points per decade.
For a more accurate measurement, perform correction data measurement at the measurement frequency before
starting the capacitance measurement.
If the measurement frequency is not included in the list of default frequencies below, click the Advanced
Options... button and set the measurement frequency on the Frequency area of the Advanced Options for CMU
Calibration window.
Default frequencies:
1 k, 2 k, 5 k, 10 k, 20 k, 50 k, 100 k, 200 k, 500 k, 1 M, 1.2 M, 1.5 M, 2 M, 2.5 M, 2.7 M, 3 M, 3.2 M, 3.5 M,
3.7 M, 4 M, 4.2 M, 4.5 M, 5 MHz
[Device Under Test]
MOS capacitor, 2 terminals
Connect CMU High and CMU Low to the substrate and gate respectively.
[Required Modules and Accessories]
Agilent B1520A MFCMU 1 unit
[Device Parameters]
Polarity: Nch (CMU forces the specified value) or Pch (CMU forces the negative specified value)
Lg: Gate length
Wg: Gate width
Temp: Temperature (deg C)
[Test Parameters]
IntegTime: Integration time
FreqStart: Sweep start frequency, LOG sweep
NoOfDecade: Number of decades for data collection
OscLevel: Measurement signal level
Gate: CMU connected to Gate terminal
Vgs: Voltage for Gate terminal, constant voltage
[Extended Test Parameters]
G_Min: Minimum transconductance value for graph
G_Max: Maximum transconductance value for graph
Cp_Min: Minimum capacitance value for graph
Cp_Max: Maximum capacitance value for graph
[Measurement Parameters]
Parallel capacitance Cp
Conductance G
[User Function]
Circular constant PI=3.141592653589
Frequency Frequency=Freq
Dissipation factor D=G/(2*PI*Freq*Cp)
Parallel resistance Rp=1/G
Agilent EasyEXPERT Application Library Reference, Edition 8
15-6
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...