
5 MCSMU_IV
5.3
Id-Vgs MCSMU 2-stage: Id-Vgs characteristics, MCSMU Pulse
(A.05.50_2013.04.10.1)
[Supported Analyzer]
B1500A
[Description]
Measures Drain current vs Gate voltage characteristics. SMU pulses are used for the Drain-Source and gate-
Source voltage output.
Measurement is performed twice with lower compliance for low current region, higer compliance for high
current region, then merge two curves.
[Device Under Test]
Power MOSFET, 3 terminals and Subs terminal
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Temp: Temperature
YAxisgfsMin: Y axis (gfs) minimum value
YAxisgfsMax: Y axis (gfs) maximum value
[Test Parameters]
Memo: Memo
Gate: SMU connected to gate terminal, primary sweep voltage output
VgStart: Sweep start voltage for gate terminal
VgStop: Sweep stop voltage for gate terminal
VgStep: Sweep step voltage for gate terminal
GatePulseWidth: Gate pulse width
GateDelay: Gate pulse delay (Effective only for MCSMU)
GatePulseWidth2: Gate pulse width for lower current measurement
GateDelay2: Gate Pulse delay for lower current measurement (Effective only for MCSMU)
Source: COMMON connected to source terminal, 0 V voltage output
Drain: SMU connected to drain terminal, secondary sweep voltage output
VdStart: Sweep start voltage for drain terminal
VdStop: Sweep stop voltage for drain terminal
VdPoint: Sweep step point for drain terminal
IdLimit: Drain current compliance
DrainPulseWidth: Drain pulse width
IdLimit2: Drain current compliance for lower current measurement
DrainPulseWidth2:Drain pulse width for lower current measurement
EnableSubs: Enable or Disable Subs terminal assignment
Subs: SMU connected to Subs terminal, constant voltage output
Vsubs: Constant voltage for Subs terminal
PulsePeriodMode: Pulse period mode (AUTO or MANUAL)
ManualPulsePeriod: Manual pulse period
MeasurementTime: Measurement time
MeasurementTime2:Measurement time for lower current measurement
Agilent EasyEXPERT Application Library Reference, Edition 8
5-7
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...