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11 Reliability
11.39 Timing On-the-fly NBTI (A.03.11)
[Supported Analyzer]
B1500A
[Description]
This test examines the MOSFET Negative Bias Temperature Instability test. The output is a plot of the drain
current versus cumulative stress time. The time sampling characteristics of drain current is plotted between the
stress cycles. Test is performed as follows.
1. Measures drain current (measures using Sampling_Ids classic test and the results are stored in IdsList.)
2. The stress is applied based on the Stress_Time_List parameter table. The stress time can be adjusted with
roughly 100 ms accuracy by properly adjusting the Stress_T_adj parameter.
3. Measurements of the Id in the step 1 are repeated.
4. Perform measurements by repeating step2 and step3 till the cumulative stress time exceeds the
TotalStressTime. TotalStressTime can be set from 10 sec to 10,000 sec
[Device Under test]
MOSFET, 4 terminals
[Device Parameters]
Polarity: Nch or Pch
Temp: Temperature
[Test Parameters]
Sampling measurements: Perform Id sampling measurements after applying negative bias stress.
Sampling Time Parameters: Set sampling time parameters for Id characterization.
- SamplingInterval: Set sampling time interval for Id characterizes.
- SamplingNumber: Set sampling number for sampling measurements.
- NegativeHoldTime: Set sampling time under the negative bias stress before starting the id sampling
characterization.
- Id sampling characterization is made by the parameters Vg, Vd, Vsubs, and Vs.
Negative Bias Stress: Apply a specified stress for NBTI degradation test.
- TotalStressTime: Specify the maximum negative bias stress time
- Stress condition is defined by the parameters VgStress, VdStress, VsubStress, and VsStress.
[Extended Test Parameters]
IgLimit : Set Current compliance of Gate SMU.
IdLimit: Set Current compliance of Drain SMU.
IsubLimit: Set Current compliance of Bulk SMU.
NBTI_PlotTime: Sampling time of the data used for NBTI degradation plot.
RecordSamplingData: On saves the Id sampling data and OFF does not save the data.
YaxStress: Set Y axis maximum of the graph display under the stress condition.
YaxIdMin: Set Y axis maximum under the Id sampling measurements.
YaxStressMin: Set Y axis minimum of the graph display under the stress condition.
HSADC_AvN : Set averaging of HSADC. Additional sampling is performed with 45 us interval, and averaged
data is returned.
[Device_ID_Override]
DEVICE ID display in the Results area is made as “new_device_id @ measurement time” if this parameter is
set to Y.
Agilent EasyEXPERT Application Library Reference, Edition 8
11-87