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11 Reliability
11.36 TDDB Vstress2 3devices: TDDB Test, voltage stressed, 3 devices (A.03.10)
[Supported Analyzer]
B1500A
[Description]
Performs the TDDB (time dependent dielectric breakdown) test, and plots the stress time vs current
characteristics. This test is performed by the sampling measurement mode. This test also supports 3-device
connection.
[Device Under Test]
MOS capacitor, insulator, oxide layer, and so on
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
L: Length of pattern
W: Width of pattern
Temp: Temperature
[Test Parameters]
Port1: SMU connected to Port1 terminal
Port2: SMU connected to Port2 terminal
Port3: SMU connected to Port3 terminal
Port4: SMU connected to Port4 terminal
TotalStressTime: Total stress time.
FailureCondition: Measurement stop condition
V1Stress: Port1 stress voltage
V2Stress: Port2 stress voltage
V3Stress: Port3 stress voltage
IntegTime: Integration time
PointPerDecade: Number of samples in 1 decade
Interval: Sampling interval
[Extended Test Parameters]
V4: Port4 terminal voltage
I1Limit: Port1/Port2/Port3 current compliance
HoldTime: Hold time
Port1MinRng: Minimum range for the port1 current measurement
Port2MinRng: Minimum range for the port2 current measurement
Port3MinRng: Minimum range for the port3 current measurement
Port4MinRng: Minimum range for the port4 current measurement
StoringRuntimeData: Data save during stress output, Yes or No
[Measurement Parameters]
Port1 current Iport1
Port2 current Iport2
Port3 current Iport3
Port4 current Iport4
[User Function]
IPort1PerArea=Iport1/L/W
IPort2PerArea=Iport2/L/W
IPort3PerArea=Iport3/L/W
Qbd1val=integ(Iport1,Time)/L/W
Agilent EasyEXPERT Application Library Reference, Edition 8
11-83