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6 Memory
6.4 NandFlash2 Endurance 3devices: Repeatedly tests write/erase on a NAND-
type flash memory cell, simultaneously using three devices (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Repeatedly tests write/erase on a NAND-type flash memory cell. Plots the number of writes/erases vs
threshold voltage characteristic. Maximum three devices can be measured at once.
[Device Under Test]
NAND-type flash memory cell, 4 terminals x 3 devices
When some device is destroyed during write/erase, a desired voltage may not be applied to other devices.
[Required Modules and Accessories]
Agilent B2200A or B2201A switching matrix 1 unit
Agilent 81110A pulse generator (2-output, PGU1 and PGU2) 1 unit
GPIB cable
Connect 81110A, B2200A/B2201A and B1500A with measurement cables and GPIB cables.
Set information on B1500A SMU channel's connection to the B2200A/B2201A input port properly on the
Switching Matrix tab screen of the Configuration window.
Set information on 81110A output channel's connection to B2200A/B2201A input port properly in the
PulseGate and PulseDrain fields of the Test Parameters area. Set B2200A/B2201A input ports connected to the
output channel of a gate pulse and drain pulse in these fields.
Set the output channel number of B2200A/B2201A connected to each terminal of a measured device properly
in the Tr#Gate/Tr#Drain/Tr#Source/Tr#Subs field (# is an integer from 1 to 3) of the Test Parameters area.
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature (deg C)
IdMax: Drain current compliance
[Test Parameters]
IntegTime: Integration time
TotalWriteAndEraseCycles: Number of write/erase cycles
Tr1Gate - Tr3Gate: SWM Pin Assign setting for Gate of devices
Tr1Drain - Tr3Drain: SWM Pin Assign setting for Drain of devices
Tr1Source - Tr3Source: SWM Pin Assign setting for Source of devices
Tr1Subs - Tr3Subs: SWM Pin Assign setting for Subs of devices
PgAdd: GPIB address of pulse generator
PulseGate: B2200A/B2201A input port for Gate pulse
PulseDrain: B2200A/B2201A input port for Drain pulse
ErasePeriod: Write/Erase pulse period
EraseDelay: Write/Erase pulse delay
EraseWidth: Write/Erase pulse width
EraseLeadTime: Pulse leading edge transition time
EraseTrailTime: Pulse trailing edge transition time
Verase: Pulse voltage output level, High
BaseValue: Pulse voltage output level, Low
Agilent EasyEXPERT Application Library Reference, Edition 8
6-10