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7 MixedSignal
7.16
Id-Vd Mismatch[3]: Id-Vd characteristics mismatch, 3-terminal (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Measures the drain current vs drain voltage characteristics of two MOSFETs, and plots the differences of them.
[Device Under Test]
MOSFET, 3 terminals, 2 ea.
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
IntegTime: Integration time
DrainA: SMU connected to the device A Drain terminal, primary sweep voltage output
DrainB: SMU connected to the device B Drain terminal, synchronous sweep voltage output
Gate: SMU connected to Gate terminal, secondary sweep voltage output
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
IgLimit: Gate current compliance
Source: SMU connected to Source terminal, constant voltage output
Vd: Drain voltage
[Extended Test Parameters]
Vs: Source voltage
HoldTime: Hold time
DelayTime: Delay time
DrainMinRng: Minimum range for the drain current measurement
[Measurement Parameters]
Device A Drain current IdrainA
Device B Drain current IdrainB
[User Function]
Drain conductance gds_A=diff(IdrainA,VdrainA)
Drain conductance gds_B=diff(IdrainB,VdrainB)
Drain resistance Rds_A=1/gds_A
Drain resistance Rds_B=1/gds_B
Delta_Ids=(IdrainA-IdrainB)/IdrainA*100
Delta_gds=(gds_A-gds_B)/gds_A*100
Delta_Rds=(Rds_A-Rds_B)/Rds_A*100
[X-Y Graph]
X axis: Drain voltage VdrainA (LINEAR)
Y1 axis: Device A Drain current IdrainA (LINEAR)
Y2 axis: Device B Drain current IdrainB (LINEAR)
Y3 axis: Difference of Drain current Delta_Ids (LINEAR)
Agilent EasyEXPERT Application Library Reference, Edition 8
7-31
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
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Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
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Страница 285: ...11 Reliability ...
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Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...