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1 BJT
1.3
BVcbo: Base-Collector junction breakdown voltage (A.01.20)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Measures the collector current vs collector voltage characteristics, and extracts the Base-Collector junction
breakdown voltage (BVcbo). Emitter and Substrate are opened.
[Device Under Test]
Bipolar transistor
[Device Parameters]
Polarity: NPN (SMUs force the specified value) or PNP (SMUs force the negative specified value).
Lb: Base length
Wb: Base width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
Ic@BVcbo: Collector current to decide the breakdown
Collector: SMU connected to Collector terminal, primary sweep voltage output
VcStart: Sweep start voltage for Collector terminal
VcStop: Sweep stop voltage for Collector terminal
VcStep: Sweep step voltage for Collector terminal
Base: SMU connected to Base terminal, constant voltage output
[Extended Test Parameters]
Vb: Base voltage
HoldTime: Hold time
DelayTime: Delay time
CollectorMinRng: Minimum range for the collector current measurement
BaseMinRng: Minimum range for the base current measurement
[Measurement Parameters]
Collector current Icollector
Base current Ibase
For the all terminals, the SMU current compliance is set to Ic@BVcbo*1.1.
[User Function]
IcPerArea=Icollector/Lb/Wb
IbPerArea=Ibase/Lb/Wb
[Analysis Function]
BVcbo=@L1X (X interrupt of Line1)
[X-Y Plot]
X axis: Collector voltage Vcollector (LINEAR)
Y1 axis: Collector current Icollector (LOG)
Y2 axis: Base current Ibase (LOG)
[Parameters Display Area]
Base-Collector junction breakdown voltage BVcbo
[Auto Analysis]
Line1: Vertical line through Y1 data at Icollector=Ic@BVcbo
Agilent EasyEXPERT Application Library Reference, Edition 8
1-5
Содержание EasyEXPERT
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Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...