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21 GaN FET
21.1 FET Current Collapse IV-t Sampling (I Force): GaN FET Current Collapse
characteristics (using N1267A) (A.05.02)
[Supported Analyzer]
B1505A
[Description]
Measures Current Collapse of GaN FET.
On state current, voltage and resistance after off state are sampled using N1267A.
[Device Under Test]
GaN FET, 4 terminals
[Device Parameters]
Temp: Temperature
RdsAxisMin: Y axis (Rds) minimum value
RdsAxisMax: Y axis (Rds) maximum value
VdsAxisMin: Y axis (Vds) minimum value
VdsAxisMax: Y axis (Vds) maximum value
IdAxisMin: Y axis (Id) minimum value
IdAxisMax: Y axis (Id) maximum value
[Test Parameters]
Memo: Memorandum
GNDU: GNDU connected to N1267A GNDU input
HVSMU: HVSMU connected to N1267A HVSMU input
HCSMU: HCSMU connected to N1267A HCSMU input
SwitchControl: MCSMU connected to N1267A Switch Control
Gate: MCSMU/HCSMU connected to Gate terminal
Substrate: SMU/GNDU connected to Substrate
VgOff: Gate off voltage
VgOn: Gate on voltage
VdOff: Drain voltage applied while off state
VdOnLimit: Drain voltage compliance for on state (Voltage drops inside of N1267A according to on state
current)
IdOn: Drain current applied while on state
OffStressTime: Duration of VdOff application
SamplingInterval: Sampling interval
NumberOfSamples: Number of samples
[Extended Test Parameters]
SamplingMode: Options for linear or log sampling
SamplingStartTime: Time offset from turning DUT on to starting sampling
MaxPlottingTime: Max time of graph X axis for plotting
MeasurementTime: Actural measurement time for a sample (effective in case of 2ms or above
SamplingInterval)
IgLimit: Gate current compliance
IdOffLimit: Drain current compliance for off state
（
AUTO: 8mA for VdOff up to 1500V, 4mA for VdOff
above 3kV
）
DischargingSwitchControl: Option for discharging by N1267A internal switch (for the case of on state current
less than IdOffLimit)
VerboseDataStore: Option for saving data of the embedded classic test setup
Agilent EasyEXPERT Application Library Reference, Edition 8
21-3