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15 Structure
15.2 BVgb: MOS capacitor Gate-Substrate breakdown voltage (A.01.20)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Measures the gate current vs gate voltage characteristics and extracts the breakdown voltage between gate and
substrate (BVgb) of MOS capacitor.
[Device Under Test]
MOS capacitor
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
Ig@BVgb: Gate current to decide the breakdown
Gate: SMU connected to Gate, primary sweep voltage output
VgStart: Sweep start voltage for Gate
VgStop: Sweep stop voltage for Gate
VgStep: Sweep step voltage for Gate
Subs: SMU connected to Substrate, constant voltage output
Vsubs: Substrate voltage
[Extended Test Parameters]
HoldTime: Hold time
DelayTime: Delay time
GateMinRng: Minimum rabge for the gate current measurement
[Measurement Parameters]
Gate current Igate
For the all terminals, the SMU current compliance is set to Ig@BVgb*1.1.
[User Function]
Gate current per Gate unit area Igate_Area=Igate/Lg/Wg
[Analysis Function]
BVgb=@L1X (X intercept of Line1)
[X-Y Plot]
X axis: Gate voltage Vgate (LINEAR)
Y1 axis: Gate current Igate (LOG)
Y2 axis: Gate current per Gate unit area Igate_Area (LOG)
[Parameters Display Area]
Gate-Substrate breakdown voltage BVgb
[Auto Analysis]
Line1: Vertical line through Y1 data at Igate=Ig@BVgb
Agilent EasyEXPERT Application Library Reference, Edition 8
15-5