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11 Reliability
Vd3: Drain terminal voltage
IdsStopRate: Ids change rate to stop testing
[Extended Test Parameters]
StoringRuntimeData: Data save during stress output, Yes or No
[Extended Test Parameters for Sampling_Stress]
Vd: Drain terminal voltage, constant voltage
Vs: Source terminal voltage, constant voltage
IgLimit: Gate current compliance
[Extended Test Parameters for IvSweep_ConstId]
HoldTime: Hold time
DelayTime: Delay time
Vs: Source terminal voltage, constant voltage
DrainMinRng: Minimum range for drain current measurement
[Extended Test Parameters for IvSweep_gmmax]
HoldTime: Hold time
DelayTime: Delay time
IgLimit: Gate current compliance
Vs: Source terminal voltage, constant voltage
DrainMinRng: Minimum range for drain current measurement
[Extended Test Parameters for Sampling_Ids]
IgLimit: Gate current compliance
Vs: Source terminal voltage, constant voltage
DrainMinRng: Minimum range for drain current measurement
[Measurement Parameters]
[Measurement Parameters by Sampling_Stress]
Gate current Igate
[Measurement Parameters by IvSweep_ConstId]
Drain current Idrain
[Measurement Parameters by IvSweep_gmmax]
Drain current Idrain
[Measurement Parameters by IvSweep_Ids]
Drain current Idrain
[User Function]
[User Function for IvSweep_ConstId]
Maximum drain current value IdMax=max(abs(Idrain)) (For initial measurement only)
[User Function for IvSweep_gmmax]
Maximum drain current value IdMax=max(abs(Idrain)) (For initial measurement only)
Transconductance gm=diff(Idrain,Vgate)
Maximum transconductance value gmMax=max(gm)
[Analysis Function]
[Analysis Function for IvSweep_ConstId]
Vth@Id=@L1X (X intercept of Line1)
Agilent EasyEXPERT Application Library Reference, Edition 8
11-36
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...