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27 PowerMOSFET, PMIC, SiC
27.2
Cgd: Power MOSFET Cgd-Vd characteristics (A.05.50)
[Supported Analyzer]
B1505A
[Description]
Measures Gate-Drain capacitance (Cgd), and plots Cgd-Vd characteristics.
For a more accurate measurement, perform correction data measurement at the measurement frequency before
starting the capacitance measurement.
If the measurement frequency is not included in the list of default frequencies below, click the Advanced
Options... button and set the measurement frequency on the Frequency area of the Advanced Options for CMU
Calibration window.
Default frequencies:
1 k, 2 k, 5 k, 10 k, 20 k, 50 k, 100 k, 200 k, 500 k, 1 M, 1.2 M, 1.5 M, 2 M, 2.5 M, 2.7 M, 3 M, 3.2 M, 3.5 M,
3.7 M, 4 M, 4.2 M, 4.5 M, 5 MHz
[Device Under Test]
Power MOSFET, 3 terminals
Connect Drain, Gate, and Source to the High Voltage Bias-T High, Low, and AC Guard respectively.
Or, connect Drain, Gate, and Source to the Test Fixture MFCMU High, MFCMU Low, and AUX circuit
common respectively.
[Required Modules and Accessories]
Agilent B1520A MFCMU 1 unit
Agilent N1260A High Voltage Bias-T or Agilent N1259A Test Fixture with the option N1259A-020
[Device Parameters]
Polarity: Nch (SMU forces the specified value) or Pch (SMU forces the negative specified value).
Temp: Temperature
YAxisCgdMin: Y axis (Cgd) minimum value
YAxisCgdMax: Y axis (Cgd) maximum value
[Test Parameters]
Memo: Memorandum
IntegTime: Integration time
Frequency: Measurement frequency
OscLevel: Measurement signal level
Scale: Scale of DC bias sweep, LINEAR, LOG10, LOG25, or LOG50
Drain: CMU used for the capacitance measurement
VdBias: SMU used for the DC bias sweep source
VdStart: DC bias sweep start voltage
VdStop: DC bias sweep stop voltage
VdLinearStep: DC bias sweep step voltage, effective if Scale=LINEAR
IdLimit: Drain current compliance
[Extended Test Parameters]
HoldTime: Hold time
DelayTime: Delay time
IdMinRange: Minimum range for the drain current measurement
[Measurement Parameters]
Gate-Drain capacitance Cgd
Drain current Idrain
Agilent EasyEXPERT Application Library Reference, Edition 8
27-5
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
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Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
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Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
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Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...