Agilent Technologies EasyEXPERT, Руководство пользователя, Страница: 483 / 610

18 WGFMU
18.2 Fast BTI(DC stress Id-Sampling): Bias Temperature Instability Test, using
WGFMU (A.03.20)
[Supported Analyzer]
B1500A
[Description]
Performs the bias temperature instability test with the DC stress, and plots the accumulated stress time vs drain
current characteristics. This test is performed by repeating the following steps for the accumulated stress time defined
in Accumlated_Stress_Time.
1. DC stress output
2. Drain current measurement
[Device Under Test]
MOSFET, 3 or 4 terminals
Drain and gate must be connected to WGFMU channel through RSU.
Source and substrate must be connected to WGFMU ground which is the outer conductor of the RSU Output
terminals used for Drain and Gate.
[Required Modules and Accessories]
Agilent B1530A WGFMU 1 unit
Agilent B1531A RSU 2 set
[Device Parameters]
Polarity: Nch (forces specified value) or Pch (forces negative specified value)
Temp: Temperature (deg C)
L: Gate length
W: Gate width
[Test Parameters]
GateCh: WGFMU channel connected to Gate terminal
DrainCh: WGFMU channel connected to Drain terminal
IdMeasRange: Drain current measurement range (for Id measurement)
IdStressRange: Drain current measurement range (for DC stress)
RangeChangeHold: Wait time at the transition from stress to measurement
RangeChangeHold must be set to minimize the impact of the range change.
[Stress Setup]
VgStress: Stress voltage for Gate terminal
VdStress: Stress voltage for Drain terminal
Accumlated_Stress_Time: Accumulated stress time
Accumulated stress time can be defined by using the Define vector data dialog box. Enter the accumulated stress
time values in the first column from up to down. To open the Define vector data dialog box, click the left button in
the Accumlated_Stress_Time field. Clicking the * button on the dialog box increases the entry fields.
[Meas Setup]
VgMeas: Gate voltage for Id measurement
VdMeas: Drain voltage for Id measurement
MeasDelay: Delay time until the measurement is started after the transition to the measurement voltage is started
MeasInterval: Sampling interval (for Id measurement)
MeasPoints: Number of the Id measurement points
IntegTime: Integration time for one measurement point
TransEdge: Voltage change time between the stress voltage and the measurement voltage, for both Gate and Drain
terminals
Agilent EasyEXPERT Application Library Reference, Edition 8
18-5