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6 Memory
6.23
NorFlash Endurance: NOR flash memory cell endurance test (A.03.10)
[Supported Analyzer]
B1500A
[Description]
Performs the endurance test for the NOR type flash memory cell and plots the number of write/erase operation
vs threshold voltage characteristics.
[Device Under Test]
NOR-type flash memory cell
[Required Modules and Accessories]
Agilent B1525A SPGU 2 units
Selector (16440A/16445A 2 sets or HRSMU/ASU 3 sets)
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, constant voltage output
Source: SMU connected to Source terminal, constant voltage output
Subs: SMU connected to Substrate terminal, constant voltage output
Pgate: SPGU channel connected to Gate terminal via Selector
Pdrain: SPGU channel connected to Drain terminal via Selector
Psource: SPGU channel connected to Source terminal via Selector
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
Vd: Drain voltage
Id@Vth: Drain current to decide the Vth
IntegTime: Integration time
TotalWriteAndEraseCycles: Total number of write/erase operation
WritePeriod: Write pulse period
WriteGateDelay: Gate write pulse delay
WriteGateWidth: Gate write pulse width
WriteGateVwrite: Gate write pulse output level
WriteGateLeadingTime: Gate write pulse leading edge transition time
WriteGateTrailingTime: Gate write pulse trailing edge transition time
WriteDrainDelay: Drain write pulse delay
WriteDrainWidth: Drain write pulse width
WriteDrainVwrite: Drain write pulse output level
WriteDrainLeadingTime: Drain write pulse leading edge transition time
WriteDrainTrailingTime: Drain write pulse trailing edge transition time
ErasePeriod: Erase pulse period
EraseGateDelay: Gate erase pulse delay
EraseGateWidth: Gate erase pulse width
EraseGateVerase: Gate erase pulse output level
EraseGateLeadingTime: Gate erase pulse leading edge transition time
Agilent EasyEXPERT Application Library Reference, Edition 8
6-49
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...