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2 CMOS
2.8
Cgc-Vg: Cgc-Vg characteristics (A.01.11)
[Supported Analyzer]
B1500A
[Description]
Measures the Gate-Channel capacitance (Cgc), and plots the Cgc-Vg characteristics.
DC bias output is performed from -VgsStart to -VgsStop in -VgsStep steps. The CMU performs spot
measurement of the parallel capacitance (Cp) and conductance (G) at each bias output. The substrate voltage is
changed simultaneously with the DC bias output to keep the Channel-Substrate voltage constant. The SMU
works as the constant voltage source and realizes the secondary sweep by repeating the output change every DC
bias sweep.
For a more accurate measurement, perform correction data measurement at the measurement frequency before
starting the capacitance measurement.
If the measurement frequency is not included in the list of default frequencies below, click the Advanced
Options... button and set the measurement frequency on the Frequency area of the Advanced Options for CMU
Calibration window.
Default frequencies:
1 k, 2 k, 5 k, 10 k, 20 k, 50 k, 100 k, 200 k, 500 k, 1 M, 1.2 M, 1.5 M, 2 M, 2.5 M, 2.7 M, 3 M, 3.2 M, 3.5 M,
3.7 M, 4 M, 4.2 M, 4.5 M, 5 MHz
[Device Under Test]
MOSFET, 4 terminals
Connect Gate to the CMU Low, and Drain-Source to the CMU High. And connect Substrate to the specified
SMU.
[Device Parameters]
Polarity: Nch (CMU/SMU forces the specified value) or Pch (CMU/SMU forces the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
FREQ: Measurement frequency
OscLevel: Measurement signal level
Gate: CMU connected between Gate and channel (CV spot measurement)
VgsStart: DC bias start voltage (primary sweep)
VgsStop: DC bias stop voltage (primary sweep)
VgsStep: DC bias step voltage (primary sweep)
Subs: SMU connected to Substrate terminal (constant voltage output)
VbsStart: Substrate start voltage (secondary sweep)
VbsStop: Substrate stop voltage (secondary sweep)
VbsStep: Substrate step voltage (secondary sweep)
IsubsLimit: Substrate current compliance
[Extended Test Parameters]
HoldTime: Hold time
DelayTime: Delay time
[Measurement Parameters]
Parallel capacitance Cp
Conductance G
Agilent EasyEXPERT Application Library Reference, Edition 8
2-16
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
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Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...