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2 CMOS
2.6
Cgb-Vg: Cgb-Vg characteristics (A.01.11)
[Supported Analyzer]
B1500A
[Description]
Measures the Gate-Substrate capacitance (Cgs), and plots the Cgs-Vg characteristics.
DC bias output is performed from -VgsStart to -VgsStop in -VgsStep steps. The CMU performs spot
measurement of the parallel capacitance (Cp) and conductance (G) at each bias output.
For a more accurate measurement, perform correction data measurement at the measurement frequency before
starting the capacitance measurement.
If the measurement frequency is not included in the list of default frequencies below, click the Advanced
Options... button and set the measurement frequency on the Frequency area of the Advanced Options for CMU
Calibration window.
Default frequencies:
1 k, 2 k, 5 k, 10 k, 20 k, 50 k, 100 k, 200 k, 500 k, 1 M, 1.2 M, 1.5 M, 2 M, 2.5 M, 2.7 M, 3 M, 3.2 M, 3.5 M,
3.7 M, 4 M, 4.2 M, 4.5 M, 5 MHz
[Device Under Test]
MOSFET, 4 terminals
Connect Gate to the CMU Low, and Substrate to the CMU High. And connect Drain and Source to the
specified SMU.
[Device Parameters]
Polarity: Nch (CMU/SMU forces the specified value) or Pch (CMU/SMU forces the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
FREQ: Measurement frequency
OscLevel: Measurement signal level
Gate: CMU connected between Gate and substrate (CV spot measurement)
VgsStart: DC bias start voltage
VgsStop: DC bias stop voltage
VgsStep: DC bias step voltage
Source: SMU connected to Source terminal (constant voltage output)
[Extended Test Parameters]
Vs: Source voltage
IsLimit: Source current compliance
HoldTime: Hold time
DelayTime: Delay time
[Measurement Parameters]
Parallel capacitance Cp
Conductance G
[User Function]
PI=3.141592653589
D=G/(2*PI*FREQ*Cp)
Rp=1/G
Agilent EasyEXPERT Application Library Reference, Edition 8
2-12
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...