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6 Memory
6.14 NandFlash3 Endurance: NAND flash memory cell endurance test (A.03.10)
[Supported Analyzer]
B1500A
[Description]
Performs the endurance test for the NAND type flash memory cell and plots the number of write/erase
operation vs threshold voltage characteristics.
[Device Under Test]
NAND-type flash memory cell
[Required Modules and Accessories]
Agilent B1525A SPGU 1 unit
Selector (16440A/16445A 2 sets or HRSMU/ASU 3 sets)
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, constant voltage output
Source: SMU connected to Source and Substrate terminals, constant voltage output
Pgate: SPGU channel connected to Gate terminal via Selector
Psource: SPGU channel connected to Drain, Source, and Substrate via Selector
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
Vd: Drain voltage
Id@Vth: Drain current to decide the Vth
IntegTime: Integration time
TotalWriteAndEraseCycles: Total number of write/erase operation
WritePulsePeriod: Write pulse period
WritePulseDelay: Write pulse delay
WritePulseWidth: Write pulse width
WriteLeadingTime: Write pulse leading edge transition time
WriteTrailingTime: Write pulse trailing edge transition time
Vwrite: Write pulse output level
ErasePulsePeriod: Erase pulse period
ErasePulseDelay: Erase pulse delay
ErasePulseWidth: Erase pulse width
EraseLeadingTime: Erase pulse leading edge transition time
EraseTrailingTime: Erase pulse trailing edge transition time
Verase: Erase pulse output level
MeasTiming: Timing to perform Vth measurement
[Extended Test Parameters]
Vs: Source voltage
IgLimit: Gate current compliance
HoldTime: Hold time
DelayTime: Delay time
Agilent EasyEXPERT Application Library Reference, Edition 8
6-31