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6 Memory
6.7 NandFlash2 IV-Write-IV: NAND flash memory cell Id-Vg, Write, Id-Vg
(A.01.20)
[Supported Analyzer]
B1500A
[Description]
Measures the Id-Vg characteristics of NAND-type flash memory cell, performs the data write operation,
measures the Id-Vg characteristics again, and plots the both Id-Vg characteristics on a graph. Uses pulse
generator (2-output) 1 unit and HRSMU/ASU 1 set.
Before the Id-Vg measurements, the initial pulse will be applied to the device under test.
[Device Under Test]
NAND-type flash memory cell
Connect the Control Gate to the ASU Output, and the Drain to a SMU.
Open the Floating Gate. And connect the other terminals to a SMU.
[Required Modules and Accessories]
Agilent 81110A pulse generator (2-output, PGU1 and PGU2) 1 unit
HRSMU/ASU 1 set
ASU connections: Output: Control Gate, SMU: HRSMU, AUX: PGU1
Setting of ASU I/O Path, ASU tab, Configuration window: AUX
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
IntegTime: Integration time
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, constant voltage output
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
Vd: Drain voltage
Id@Vth: Drain current to decide the Vth
Source: SMU connected to Source and Substrate terminals, constant voltage output
PulsePeriod: Write pulse period
PulseDelay: Write pulse delay
PulseWidth: Write pulse width
LeadingTime: Pulse leading edge transition time
TrailingTime: Pulse trailing edge transition time
Vwrite: Write pulse output level
[Extended Test Parameters]
IgLimit: Gate current compliance
HoldTime: Hold time
DelayTime: Delay time
BaseValue: Write pulse base value
PgAdd: GPIB address of pulse generator
Agilent EasyEXPERT Application Library Reference, Edition 8
6-17