
11 Reliability
11.25
EM Vstress[6]: Electromigration test, voltage stressed, 6 SMUs (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Performs the Electromigration (EM) test for a wiring device with extrusion lines, and plots the stress time vs
resistance characteristics. This test is performed by the sampling measurement mode as shown below.
1. applies stress voltage
2. performs measurement and saves measurement data
3. calculates the device failure time
[Device Under Test]
Wiring device with extrusion lines, 6 terminals
[Device Parameters]
D: Wiring pattern length
W: Wiring pattern width
Temp: Temperature (deg C)
[Test Parameters]
IntegTime: Integration time
TotalStressTime: Total stress time
StopCondition: Measurement stop condition 1 (%changes of wire resistance)
ExtCondition: Measurement stop condition 2 (current to extrusion line)
Port1: SMU connected to Port1, constant voltage output
Port2: SMU connected to Port2, constant voltage output
Port3: SMU connected to Extrusion Line, constant voltage output
Port4: SMU connected to Extrusion Line, constant voltage output
VM1: SMU for Port1 voltage monitoring, constant voltage output
VM2: SMU for Port2 voltage monitoring, constant voltage output
V1Stress: Port1 stress voltage
[Extended Test Parameters]
V2: Port2 voltage
V3: Port3 voltage
V4: Port4 voltage
IM1: VM1 output current
IM2: VM2 output current
I1Limit: Port1 current compliance
I3Limit: Port3 current compliance
I4Limit: Port4 current compliance
HoldTime: Hold time
DelayTime: Delay time
Port1MinRng: Minimum range for Port1 current measurement
[User Function]
Potential difference between lines DeltaV=VM1-VM2
Wiring resistance value R=DeltaV/Iport1
[Test Output: X-Y Graph]
X axis: Accumulated stress time TimeList
Y1 axis: Wiring resistance value RList
Y2 axis: Port1 current Iport1List
Agilent EasyEXPERT Application Library Reference, Edition 8
11-58
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...