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6 Memory
[Test Parameters for Vth Acquisition]
MeasGate: SMU connected to Gate terminal
MeasDrain: SMU connected to Drain terminal
MeasSource: SMU connected to Source terminal
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
Vd: Drain voltage
IgLimit: Gate current compliance
Id@Vth: Current determining the threshold voltage
[Extended Test Parameters for Vth Acquisition]
Vs: Source voltage
HoldTime: Hold time
DelayTime: Delay time
Vth_Min: Minimum Vth value for graph scale
Vth_Max: Maximum Vth value for graph scale
DrainMinRng1: Minimum range for drain current measurement on device 1
DrainMinRng2: Minimum range for drain current measurement on device 2
DrainMinRng3: Minimum range for drain current measurement on device 3
[Measurement Parameters]
[Measurement Paramaters for Vth Acquisition after Write Operation]
Drain current: Idrain
[Measurement Parameters for Vth Acquisition after Erase Operation]
Drain current: Idrain
[Analysis Function]
[Analysis Function for Vth Acquisition after Write Operation]
Vth@Id=@L1X (X intercept of Line1)
[Analysis Function for Vth Acquisition after Erase Operation]
Vth@Id=@L1X (X intercept of Line1)
[Auto Analysis]
[Auto Analysis for Vth Acquisition after Write Operation]
Line1: Idrain=X intercept of Id@Vth
[Auto Analysis for Vth Acquisition after Erase Operation]
Line1: Idrain=X intercept of Id@Vth
[X-Y Plot]
[X-Y Plot for Vth Acquisition after Write Operation]
X axis: Gate voltage Vgate (LINEAR)
Y1 axis: Drain current Idrain (LOG)
[X-Y Plot for Vth Acquisition after Erase Operation]
X axis: Gate voltage Vgate (LINEAR)
Y1 axis: Drain current Idrain (LOG)
[List Display]
[List Display for Vth Acquisition after Write Operation]
Gate voltage Vgate
Drain current Idrain
Agilent EasyEXPERT Application Library Reference, Edition 8
6-11
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...