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6 Memory
6.2 Flash Cfb-V: Flash memory cell Floating Gate-Substrate capacitance
(A.01.11)
[Supported Analyzer]
B1500A
[Description]
Measures the Floating Gate-Substrate capacitance (Ccf), and plots the Cfb-V characteristics.
DC bias output is performed from -VfbStart to -VfbStop in -VfbStep steps.
For a more accurate measurement, perform correction data measurement at the measurement frequency before
starting the capacitance measurement.
If the measurement frequency is not included in the list of default frequencies below, click the Advanced
Options... button and set the measurement frequency on the Frequency area of the Advanced Options for CMU
Calibration window.
Default frequencies:
1 k, 2 k, 5 k, 10 k, 20 k, 50 k, 100 k, 200 k, 500 k, 1 M, 1.2 M, 1.5 M, 2 M, 2.5 M, 2.7 M, 3 M, 3.2 M, 3.5 M,
3.7 M, 4 M, 4.2 M, 4.5 M, 5 MHz
[Device Under Test]
Flash memory cell
Connect the Control Gate to ground unit (GNDU), the Floating Gate to CMU Low, and the other terminals to
CMU High.
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature
M: Number of cells connected in parallel. M=1 for the single cell.
[Test Parameters]
IntegTime: Integration time
FREQ: Measurement frequency
OscLevel: Measurement signal level
FloatingGate: CMU connected between Floating Gate and Substrate (CV sweep measurement)
VfbStart: DC bias start voltage
VfbStop: DC bias stop voltage
VfbStep: DC bias step voltage
[Extended Test Parameters]
HoldTime: Hold time
DelayTime: Delay time
[Measurement Parameters]
Parallel capacitance Cp
Conductance G
[User Function]
PI=3.141592653589
D=G/(2*PI*FREQ*Cp)
Rp=1/G
Cs=(1+D^2)*Cp
X=-1/(2*PI*FREQ*Cs)
Agilent EasyEXPERT Application Library Reference, Edition 8
6-6