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18 WGFMU
SeqDelay: Device delay time
TransEdge: Voltage change time between the stress voltage and the measurement voltage, for both Gate and Drain
terminals
IntegTime: Integration time for one measurement point
StepDelay: Step delay time
Hold: Hold time
Device delay time must be set to avoid that the high voltage is applied to the drain and gate terminals
simultaneously at the transition between stress and measurement. The value depends on the device under test,
TransEdge value, and such.
Step delay time is defined as the time from the step output start to the step measurement start.
Hold time is defined as the time from the measurement voltage output start to the sweep operation start. For the
Dual slope, the hold time is taken at the sweep start of both forward sweep and reverse sweep.
[Device_ID_Setup]
Device_ID_Override: Y (sets the New_Device_ID value to the Device ID) or N (does not set)
New_Device_ID: Device ID
[Extended Test Parameters]
VgForceRange: Gate voltage output range
VdForceRange: Drain voltage output range
StepMargin: Time from the step measurement end to the next step output start (not available for the ramp sweep)
[Test Output: X-Y Graph]
Id-t: Drain current vs Time characteristics
Id-Vg: Drain current vs Gate voltage characteristics
Vth-AccumlatedStressTime: Threshold voltage vs Accumulated stress time characteristics
Agilent EasyEXPERT Application Library Reference, Edition 8
18-10
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...