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2 CMOS
2.23
Isub-Vg: Isub-Lg characteristics (A.01.20)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Measures the substrate current vs gate voltage characteristics of MOSFET.
[Device Under Test]
MOSFET, 4 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value)
Lg: Gate length
Wg: Gate width
Temp: Temperature (deg C)
[Test Parameters]
IntegTime: Integration time (SHORT, MEDIUM, LONG) default: MEDIUM
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, secondary sweep voltage output
Subs: SMU connected to Substrate terminal, constant voltage output
Source: SMU connected to Source terminal, constant voltage output
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
VdStart: Sweep start voltage for Drain terminal
VdStop: Sweep stop voltage for Drain terminal
VdStep: Sweep step voltage for Drain terminal
[Extended Test Parameters]
HoldTime: Hold time
DelayTime: Delay time
Vsubs: Substrate terminal voltage
IgLimit: Gate current compliance
IdLimit: Drain current compliance
IsubsLimit: Substrate current compliance
Vs: Source terminal voltage
DrainMinRng: Minimum range for drain current measurement
SubsMinRng: Minimum range for substrate current measurement
GateMinRng: Minimum range for gate current measurement
[Measurement Parameters]
Substrate current Isubs
[X-Y Plot]
X axis: Gate voltage Vgate (LINEAR)
Y1 axis: Substrate current Isubs (LOG)
[List Display]
Gate voltage Vgate
Substrate current Isubs
Drain current Idrain
Gate current Igate
Agilent EasyEXPERT Application Library Reference, Edition 8
2-38
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...