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15 Structure
15.8
Diode BVAndCj-V ASU : Diode junction capacitance and breakdown
voltage measurement using ASUs (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Measures the reverse bias junction capacitance and breakdown voltage by using one MFCMU and two sets of
the HRSMU/ASU.
For a more accurate measurement, perform correction data measurement at the measurement frequency before
starting the capacitance measurement.
If the measurement frequency is not included in the list of default frequencies below, click the Advanced
Options... button and set the measurement frequency on the Frequency area of the Advanced Options for CMU
Calibration window.
Default frequencies:
1 k, 2 k, 5 k, 10 k, 20 k, 50 k, 100 k, 200 k, 500 k, 1 M, 1.2 M, 1.5 M, 2 M, 2.5 M, 2.7 M, 3 M, 3.2 M, 3.5 M,
3.7 M, 4 M, 4.2 M, 4.5 M, 5 MHz
[Device Under Test]
Diode
[Required Modules and Accessories]
One MFCMU module and two sets of HRSMU/ASU are required.
ASU#1 connections: Output: anode, SMU: HRSMU, AUX: MFCMU High
ASU#2 connections: Output: cathode, SMU: HRSMU, AUX: MFCMU Low
Connection wire must be connected between the CMU Return terminals of ASUs.
Setting of ASU I/O Path, ASU tab, Configuration window: AUX
[Device Parameters]
L: Diode length
W: Diode width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
[Test Parameters: for Junction Capacitance Measurements]
AnodeAC: CMU connected to Anode terminal
FREQ: Measurement frequency
OscLevel: Measurement signal level
VBiasStart: DC bias start voltage
VBiasStop: DC bias stop voltage
VBiasStep: DC bias step voltage
[Test Parameters: for Breakdown Voltage Measurements]
AnodeDC: SMU connected to Anode terminal, primary sweep voltage output
VanodeStart: Sweep start voltage for Anode terminal
VanodeStop: Sweep stop voltage for Anode terminal
VanodeStep: Sweep step voltage for Anode terminal
Ianode@BV: Anode current to decide the breakdown
CathodeDC: SMU connected to Cathode terminal, constant voltage output
Agilent EasyEXPERT Application Library Reference, Edition 8
15-16
Содержание EasyEXPERT
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Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
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Страница 285: ...11 Reliability ...
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Страница 381: ...13 Solar Cell ...
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Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...