
11 Reliability
[Extended Test Parameters for Sampling_Ids]
Vs: Source terminal voltage, constant voltage
IgLimit: Gate current compliance
IdLimit: Drain current compliance
DrainMinRng1: Minimum range for drain current measurement on device 1
DrainMinRng2: Minimum range for drain current measurement on device 1
DrainMinRng3: Minimum range for drain current measurement on device 1
[User Function]
[User Function for Sampling_Stress]
Maximum elapsed time value MaxTime=max(Time)
Stress time StressTime=Time
[User Function for IvSweep_ConstId]
Maximum drain current value IdMax=max(abs(Idrain)) (For initial measurement only)
[User Function for IvSweep_gmmax]
Transconductance gm=diff(Idrain,Vgate)
Maximum transconductance value gmmax=max(gm)
Maximum drain current value IdMax=max(abs(Idrain)) (For initial measurement only)
[Analysis Function]
[Analysis Function for IvSweep_ConstId]
Vth@Id=@L1X (X intercept of Line1)
[Analysis Function for IvSweep_gmmax]
Vth@Gm=@L1X (X intercept of Line1)
[Auto Analysis]
[Auto Analysis for IvSweep_ConstId]
Line1: Vertical line for Y1 at Idrain=Id@Vth
[Auto Analysis for IvSweep_gmmax]
Line1: Tangent line for Y1 at gm=gmMax
[Test Output: X-Y Graph]
X axis: Elapsed time TimeList (LOG)
Y1 axis: Drain current for device 1 Dev1_IdsList (LOG)
Y2 axis: Drain current for device 2 Dev2_IdsList (LOG)
Y3 axis: Drain current for device 3 Dev3_IdsList (LOG)
Y4 axis: Maximum transconductance value for device 1 Dev1_GmMaxList (LINEAR)
Y5 axis: Maximum transconductance value for device 2 Dev2_GmMaxList (LINEAR)
Y6 axis: Maximum transconductance value for device 3 Dev3_GmMaxList (LINEAR)
[Test Output: List Display]
TimeList: Elapsed time
Dev1_IdsList: Drain current for device 1
Dev2_IdsList: Drain current for device 2
Dev3_IdsList: Drain current for device 3
Dev1_VthIdList: Vth for device 1, determined by constant current method
Dev2_VthIdList: Vth for device 2, determined by constant current method
Dev3_VthIdList: Vth for device 3, determined by constant current method
Dev1_VthGmList: Vth for device 1, determined by extrapolation method
Dev2_VthGmList: Vth for device 2, determined by extrapolation method
Dev3_VthGmList: Vth for device 3, determined by extrapolation method
Dev1_GmMaxList: Maximum transconductance value for device 1
Dev2_GmMaxList: Maximum transconductance value for device 2
Dev3_GmMaxList: Maximum transconductance value for device 3
Agilent EasyEXPERT Application Library Reference, Edition 8
11-21
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...