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1 BJT
1.13
EB Diode Fwd: Emitter-Base junction forward characteristics (A.01.20)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Measures the Emitter-Base junction forward characteristics of BJT. Collector and Substrate are opened.
[Device Under Test]
Bipolar transistor
[Device Parameters]
Polarity: NPN (SMUs force the specified value) or PNP (SMUs force the negative specified value).
Le: Emitter length
We: Emitter width
Temp: Temperature
Imax: Current compliance
[Test Parameters]
IntegTime: Integration time
Emitter: SMU connected to Emitter terminal, primary sweep voltage output
VeStart: Sweep start voltage for Emitter terminal
VeStop: Sweep stop voltage for Emitter terminal
VeStep: Sweep step voltage for Emitter terminal
Base: SMU connected to Base terminal, constant voltage output
[Extended Test Parameters]
Vb: Base voltage
HoldTime: Hold time
DelayTime: Delay time
EmitterMinRng: Minimum range for the emitter current measurement
BaseMinRng: Minimum range for the base current measurement
[Measurement Parameters]
Emitter current Iemitter
Base current Ibase
[User Function]
IePerArea=Iemitter/Le/We
IbPerArea=Ibase/Le/We
[X-Y Plot]
X axis: Emitter voltage Vemitter (LINEAR)
Y1 axis: Emitter current Iemitter (LINEAR)
Y2 axis: Emitter current Iemitter (LOG)
Y3 axis: Base current Ibase (LINEAR)
Y4 axis: Base current Ibase (LOG)
Agilent EasyEXPERT Application Library Reference, Edition 8
1-19
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...