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2 CMOS
1.
BVdss:
Breakdown voltage between source and drain (A.01.20)
2.
BVgso:
Breakdown voltage between gate and source (A.01.20)
3.
Cgb-AC Level:
Cgb-Vosc characteristics (A.01.11)
4.
Cgb-Freq Log:
Cgb-f characteristics (A.01.20)
5.
Cgb-Vg HighVoltage:
Cgb-Vg characteristics using SCUU (A.01.11)
6.
Cgb-Vg:
Cgb-Vg characteristics (A.01.11)
7.
Cgc-Freq Log:
Cgc-f characteristics (A.01.20)
8.
Cgc-Vg:
Cgc-Vg characteristics (A.01.11)
9.
Cgg-Freq Linear:
Cgg-f characteristics (A.01.20)
10.
Cgg-Freq Log:
Cgg-f characteristics (A.01.20)
11.
Cgg-Vg 2Freq:
Cgg-Vg characteristics, 2-frequency method (A.01.11)
12.
Cgg-Vg:
Cgg-Vg characteristics (A.01.11)
13.
IdRdsGds:
Drain resistance/conductance (A.01.20)
14.
Id-Vd pulse:
Id-Vd characteristics, SMU Pulse (A.01.11)
15.
Id-Vd pulse[3]:
Id-Vd characteristics (3-terminal), SMU Pulse (A.01.11)
16.
Id-Vd:
Id-Vd Characteristics (A.01.20)
17.
Id-Vd[3]:
Id-Vd Characteristics (3-terminal) (A.01.20)
18.
Id-Vg pulse:
Id-Vg characteristics, SMU Pulse (A.01.12)
19.
Id-Vg Vpulse[3]:
Id-Vg characteristics (3-terminal), SMU Pulse (A.01.11)
20.
Id-Vg:
Id-Vg Characteristics (A.01.20)
21.
Id-Vg[3]:
Id-Vg Characteristics (3-terminal) (A.01.20)
22.
IonIoffSlope:
On current, off current, and subthreshold slope (A.01.20)
23.
Isub-Vg:
Isub-Lg characteristics (A.01.20)
24.
QSCV[4]:
C-Vg, Ig-Vg (4-terminal) (A.03.00)
25.
QSCV C Offset Meas:
Offset capacitance measurement
26.
Simple Cgb:
Evaluation of gate-substrate capacitance versus gate voltage (A.01.10)
27.
Simple Vth:
Evaluation of Threshold Voltage (Vth) (A.01.20)
28.
Vth Const Id:
Constant current Vth (A.01.20)
29.
Vth gmMax:
Linear region Vth (A.01.20)
30.
VthAndCgg-Vg ASU:
Cgg-Vg, Id-Vg, using ASU (A.01.20)
31.
VthAndCgg-Vg SCUU:
Cgg-Vg, Id-Vg, using SCUU (A.01.20)
32.
Vth-Lg:
Vth-Lg characteristics (A.01.20)
33.
Vth-Wg:
Vth-Wg characteristics (A.01.20)
Agilent EasyEXPERT Application Library Reference, Edition 8
2-2
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...