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11 Reliability
11.24
EM Vstress2[2]: Electromigration test, voltage stressed, 2 SMUs (A.03.10)
[Supported Analyzer]
B1500A
[Description]
Performs the Electromigration (EM) test, and plots the stress time vs resistance characteristics. This test is
performed by the sampling measurement mode as shown below.
1. applies stress voltage
2. performs measurement and saves measurement data
3. calculates the device failure time
[Device Under Test]
Wiring device, 2 terminals
[Device Parameters]
D: Wiring pattern length
W: Wiring pattern width
Temp: Temperature (deg C)
[Test Parameters]
Port1: SMU connected to Port1, constant voltage output
Port2: SMU connected to Port2, constant voltage output
TotalStressTime: Total stress time
FailureCondition: Measurement stop condition (%changes of wire resistance)
V1Stress: Port1 stress voltage
I1Limit: Port1 current compliance
IntegTime: Integration time
PointPerDecade: Number of samples in 1 decade
Interval: Sampling interval
[Extended Test Parameters]
V2: Port2 terminal voltage
HoldTime: Hold time
Port1MinRng: Minimum range for the port1 current measurement
R_Max: Y axis maximum value for resistance
StoringRuntimeData: Data save during stress output, Yes or No
[Measurement Parameters]
Port1 current Iport1
Port1 voltage Vport2
[User Function]
Wiring resistance value R=Vport1/Iport1
[X-Y Graph]
X axis: Stress time Time (LOG)
Y1 axis: Port1 current Iport1 (LOG)
Y2 axis: Resistance of wiring device R (LINEAR)
[List Display]
Stress time Time
Port1 current Iport1
Resistance of wiring device R
Agilent EasyEXPERT Application Library Reference, Edition 8
11-56
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
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Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
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Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
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Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...