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1 BJT
1.38
Vbe-We: hfe,Vbe-Le characteristics (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Measures the hfe (current amplification factor) vs Vbe (voltage between base and emitter) characteristics of
BJT with different We (emitter width) and plots hfe and Vbe's dependency on We.
[Device Under Test]
Bipolar transistor, 4 terminals
[Required Modules and Accessories]
Agilent B2200A or B2201A switching matrix 1 unit
GPIB cable
Connect B2200A/B2201A to B1500A with a measuring cable and GPIB cable.
Set information on B1500A SMU channel's connection to the B2200A/B2201A input port properly on the
Switching Matrix tab screen of the Configuration window.
Set the output channel number of B2200A/B2201A connected to each terminal of a device under test properly
in the B#/C#/E#/Sb# field (# is an integer from 1 to 12) of Test Parameters area.
The maximum number of devices connected at once depends on the number of matrix modules mounted on
B2200A/B2201A. Maximum three devices can be connected to one module at once.
[Setting of We#/B#/C#/E#/Sb# field (# is an integer from 1 to 12)]
Set one device for We#(emitter width)/B#(base)/C#(collector)/E#(emitter)/Sb#(sub strate).
We1<We2<We3... must be satisfied. Enter zero for a field with no device.
[Device Parameters]
Polarity: NPN (SMUs force the specified value) or PNP (SMUs force the negative specified value)
Temp: Temperature
IcMax: Collector current compliance
[Test Parameters]
IntegTime: Integration time
BaseSMU: SMU connected to Base terminal, constant voltage output
CollectorSMU: SMU connected to Collector terminal, constant voltage output
SbSMU: SMU connected to Substrate terminal, constant voltage output
EmitterSMU: SMU connected to Emitter terminal, primary sweep voltage output
VeStart: Sweep start voltage for Emitter terminal
VeStop: Sweep stop voltage for Emitter terminal
VeStep: Sweep step voltage for Emitter terminal
Vsubs: Substrate voltage
Ic@hfe: Collector current determining the hfe (Calculates hfe on a particular Ic)
Ie@Vbe: Emitter current determining the Vbe voltage (Calculates Vbe on a particular Ie)
Le: Emitter length
We1 - We12: Emitter width
B1 - B12: SWM Pin Assign setting for Base of devices
C1 - C12: SWM Pin Assign setting for Collector of devices
E1 - E12: SWM Pin Assign setting for Emitter of devices
Sb1 - Sb12: SWM Pin Assign setting for Subs of devices
[Extended Test Parameters]
Vb: Base voltage
Agilent EasyEXPERT Application Library Reference, Edition 8
1-45
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...