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22 IGBT
22.3
Cge: IGBT Cge-Vc characteristics (A.05.50)
[Supported Analyzer]
B1505A
[Description]
Measures Gate-Emitter capacitance (Cge), and plots Cge-Vc characteristics.
For a more accurate measurement, perform correction data measurement at the measurement frequency before
starting the capacitance measurement.
If the measurement frequency is not included in the list of default frequencies below, click the Advanced Options...
button and set the measurement frequency on the Frequency area of the Advanced Options for CMU Calibration
window.
Default frequencies:
1 k, 2 k, 5 k, 10 k, 20 k, 50 k, 100 k, 200 k, 500 k, 1 M, 1.2 M, 1.5 M, 2 M, 2.5 M, 2.7 M, 3 M, 3.2 M, 3.5 M, 3.7 M,
4 M, 4.2 M, 4.5 M, 5 MHz
[Device Under Test]
IGBT, 3 terminals
[Required Modules and Accessories]
Agilent B1520A MFCMU 1 unit
Agilent N1260A High Voltage Bias-T or Agilent N1259A Test Fixture with the option N1259A-020
[Device Parameters]
Polarity: Nch (SMU forces the specified value) or Pch (SMU forces the negative specified value).
Temp: Temperature
YAxisCgeMin: Y axis (Cge) minimum value
YAxisCgeMax: Y axis (Cge) maximum value
[Test Parameters]
Memo: Memorandum
IntegTime: Integration time
Frequency: Measurement frequency
OscLevel: Measurement signal level
Scale: Scale of DC bias sweep, LINEAR, LOG10, LOG25, or LOG50
Gate: CMU used for the capacitance measurement
VcBias: SMU used for the DC bias sweep source
VcStart: DC bias sweep start voltage
VcStop: DC bias sweep stop voltage
VcLinearStep: DC bias sweep step voltage, effective if Scale=LINEAR
IcLimit: Collector current compliance
[Extended Test Parameters]
HoldTime: Hold time
DelayTime: Delay time
IcMinRange: Minimum range for the collector current measurement
[Measurement Parameters]
Gate-Emitter capacitance Cge
Collector-Emitter current Ids
[User Function]
Ta: Temperature Ta=Temp
[X-Y Plot]
Agilent EasyEXPERT Application Library Reference, Edition 8
22-7
Содержание EasyEXPERT
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Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
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Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
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Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...