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18 WGFMU
18.4
Fast BTI(DC stress Id-Vg): Bias Temperature Instability Test, using
WGFMU (A.03.20)
[Supported Analyzer]
B1500A
[Description]
Performs the bias temperature instability test with the DC stress, and plots the accumulated stress time vs threshold
voltage characteristics. This test is performed by repeating the following steps for the accumulated stress time defined
in Accumlated_Stress_Time.
1. DC stress output
2. Id-Vg measurement
[Device Under Test]
MOSFET, 3 or 4 terminals
Drain and gate must be connected to WGFMU channel through RSU.
Source and substrate must be connected to WGFMU ground which is the outer conductor of the RSU Output
terminals used for Drain and Gate.
[Required Modules and Accessories]
Agilent B1530A WGFMU 1 unit
Agilent B1531A RSU 2 set
[Device Parameters]
Polarity: Nch (forces specified value) or Pch (forces negative specified value)
Temp: Temperature (deg C)
L: Gate length
W: Gate width
Id_at_Vth: Drain current to decide the Vth
[Test Parameters]
GateCh: WGFMU channel connected to Gate terminal
DrainCh: WGFMU channel connected to Drain terminal
IdMeasRange: Drain current measurement range (for Id-Vg measurement)
IdStressRange: Drain current measurement range (for DC stress)
RangeChangeHold: Wait time at the transition from stress to measurement
RangeChangeHold must be set to minimize the impact of the range change.
[Stress Setup]
VgStress: Stress voltage for Gate terminal
VdStress: Stress voltage for Drain terminal
Accumlated_Stress_Time: Accumulated stress time
Accumulated stress time can be defined by using the Define vector data dialog box. Enter the accumulated stress
time values in the first column from up to down. To open the Define vector data dialog box, click the left button in
the Accumlated_Stress_Time field. Clicking the * button on the dialog box increases the entry fields.
[Meas Setup]
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
StepNum: Number of measurement points (number of sweep steps) per 1 sweep
StepRise: Step voltage change time (not available for the ramp sweep)
Sweep: Step (step sweep) or Ramp (ramp sweep)
Slope: Single (VgStart to VgStop) or Dual (VgStart to VgStop to VgStart)
VdMeas: Drain voltage for the Id-Vg measurement
Agilent EasyEXPERT Application Library Reference, Edition 8
18-9
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...