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8 NanoTech
8.1
CNT Differential R[AC]: CNT Differential R-V characteristics (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Measures the conductance of a CNT 2-terminal device and plots differential R-V (resistance vs voltage)
characteristics. This test is designed to calculate resistance as the inverse of conductance. Additionally, the level
of a measurement signal is specified by a peak-to-peak value (normally effective value).
For a more accurate measurement, perform correction data measurement at the measurement frequency before
starting the capacitance measurement.
If the measurement frequency is not included in the list of default frequencies below, click the Advanced
Options... button and set the measurement frequency on the Frequency area of the Advanced Options for CMU
Calibration window.
Default frequencies:
1 k, 2 k, 5 k, 10 k, 20 k, 50 k, 100 k, 200 k, 500 k, 1 M, 1.2 M, 1.5 M, 2 M, 2.5 M, 2.7 M, 3 M, 3.2 M, 3.5 M,
3.7 M, 4 M, 4.2 M, 4.5 M, 5 MHz
[Device Under Test]
Carbon Nano Tube FET, 2 terminals
[Required Modules and Accessories]
Agilent B1520A MFCMU 1 unit
[Device Parameters]
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
Port1: CMU connected to device under test, CV sweep measurement
V1Start: Sweep output start voltage
V1Stop: Sweep output stop voltage
V1Step: Sweep output step voltage
FREQ: Measurement frequency
Meas_Vpp: Measurement signal level, Peak to Peak value of oscillation
[Extended Test Parameters]
HoldTime: Hold time
DelayTime: Delay time
AxisY_RMin: Minimum Y axis (resistance) value
AxisY_RMax: Maximum Y axis (resistance) value
[Measurement Parameters]
Conductance G
[User Function]
Differential resistance R=1/G
[X-Y Plot]
X axis: Port1 input voltage Vport1 (LINEAR)
Y1 axis: Differential resistance R (LINEAR)
[List Display]
Port1 input voltage Vport1
Differential resistance R
Conductance G
Agilent EasyEXPERT Application Library Reference, Edition 8
8-3
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...