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8 NanoTech
8.3 CNT Id-Time: CNT FET Id-Time Characteristic (A.01.20)
[Supported Analyzer]
B1500A, 4156B, 4156C
[Description]
This Algorithm evaluates the drain current with drain voltage for the gate condition change which is used as
the DNA or the antibody sensor.
The IV curves between drain and source is measured with the gate condition change which indicat amunt of
the DNA or the antibody on the gate surface as a sensor.
The Algorithm is applied the time dependent measurement.
[Device Under Test]
CNT FET, 4 terminals
[Device Parameters]
Polarity: Forward (SMUs force the specified value) or Reverse (SMUs force the negative specified value).
L: CNT length
D: CNT diameter
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
BackGate: SMU connected to Backgate terminal, secondary sweep voltage output
Source: SMU connected to Source terminal, constant voltage output
Drain: SMU connected to Drain terminal, primary sweep voltage output
SideGate: SMU connected to Sidegate, constant voltage output
VbgStart: Sweep start voltage for Backgate terminal
VbgStop: Sweep stop voltage for Backgate terminal
VbgStep: Sweep step voltage for Backgate terminal
VdStart: Sweep start voltage for Drain terminal
VdStop: Sweep stop voltage for Drain terminal
VdStep: Sweep step voltage for Drain terminal
Vsg: Sidegate voltage
IntegTime: Integration time
T1Stop: T1 stop time
T1Step: T1 step time
T2Stop: T2 stop time
T2Step: T2 step time
[Extended Test Parameters]
Vs: Source voltage
IgLimit: Backgate current compliance
HoldTime: Hold time
DelayTime: Delay time
DrainMinRng: Minimum range for the drain current measurement
[Measurement Parameters]
Drain current Idrain
Time ACC_TIME
ACC_TIME shows total time of T1Step or T2Step and measured time.
ACC_TIME = AC T1Step or Measured time of Id-Vd
Agilent EasyEXPERT Application Library Reference, Edition 8
8-6