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6 Memory
DelayTime: Delay time
BaseValue: Erase pulse base value
PgAdd: GPIB address of pulse generator
NoOfPulse: Number of output pulses for the erase operation
[Initial pulse setup parameters]
Pulse period Period2=50 s
Pulse delay Delay2=0 s
Pulse duty cycle Dcyc2=50 %
Pulse output level Level2=0 V
Pulse base value Base2=200 mV
Number of output pulses TrigCount=1
The parameters are defined in the ForcePG2 setup of the Test Contents, and can be changed by using the Test
Definition editor.
[Measurement Parameters]
Drain current Idrain (defined in Id-Vg_Initial and Id-Vg_Erased setup)
[User Function]
IdrainPerWg=Idrain/Wg (defined in Id-Vg_Initial and Id-Vg_Erased setup)
[Analysis Function]
VthBefore=@L1X (X intercept of Line1, defined in Id-Vg_Initial setup)
VthAfter=@L1X (X intercept of Line1, defined in Id-Vg_Erased setup)
[Auto Analysis]
Line1: Vertical line for Y1 at Idrain=Id@Vth
[Test Output: X-Y Graph]
X axis: Gate voltage VgateList (LINEAR)
Y1 axis: Drain current before Erase operation IdInitialList (LOG)
Y2 axis: Drain current after Erase operation IdErasedList (LOG)
[Test Output: Parameters]
Threshold voltage before Erase operation VthInitial
Threshold voltage after Erase operation VthErased
Agilent EasyEXPERT Application Library Reference, Edition 8
6-16
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...