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26 PowerDiode
26.1
Cj-Vr: Junction capacitance Cj-Vr characteristics (A.05.50)
[Supported Analyzer]
B1505A
[Description]
Measures the junction capacitance by applying the reverse bias, and plots the Cj-Vr characteristics.
For a more accurate measurement, perform correction data measurement at the measurement frequency before
starting the capacitance measurement.
If the measurement frequency is not included in the list of default frequencies below, click the Advanced
Options... button and set the measurement frequency on the Frequency area of the Advanced Options for CMU
Calibration window.
Default frequencies:
1 k, 2 k, 5 k, 10 k, 20 k, 50 k, 100 k, 200 k, 500 k, 1 M, 1.2 M, 1.5 M, 2 M, 2.5 M, 2.7 M, 3 M, 3.2 M, 3.5 M,
3.7 M, 4 M, 4.2 M, 4.5 M, 5 MHz
[Device Under Test]
Junction device, diode, 2 terminals
Connect Cathode and Anode to the High Voltage Bias-T High and Low respectively.
Or, connect Cathode and Anode to the Test Fixture MFCMU High and MFCMU Low respectively.
[Required Modules and Accessories]
Agilent B1520A MFCMU 1 unit
Agilent N1260A High Voltage Bias-T or Agilent N1259A Test Fixture with the option N1259A-020
[Device Parameters]
Temp: Temperature
YAxisCjMin: Y1/Y2 axis (Cj) minimum value
YAxisCjMax: Y1/Y2 axis (Cj) maximum value
[Test Parameters]
Memo: Memorandum
IntegTime: Integration time
Frequency: Measurement frequency
OscLevel: Measurement signal level
Cathode: CMU used for the capacitance measurement
VrStart: Reverse bias sweep start voltage
VrStop: Reverse bias sweep stop voltage
VrLinearStep: Reverse bias sweep step voltage, effective if Scale=LINEAR
IrLimit: Reverse current compliance
Scale: Scale of the reverse bias sweep, LINEAR, LOG10, LOG25, or LOG50
VrBias: SMU used for the reverse DC bias sweep source
[Extended Test Parameters]
HoldTime: Hold time
DelayTime: Delay time
IrZero: Y3 axis (Ir) minimum value
IrMinRange: Minimum range for the reverse current measurement
[Measurement Parameters]
Junction capacitance Cj
Reverse current Ir
Agilent EasyEXPERT Application Library Reference, Edition 8
26-3
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
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Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
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Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...