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6 Memory
6.20 NandFlash3 Vth(WritingTimeDependence): NAND flash memory cell
writing time dependence test (A.03.10)
[Supported Analyzer]
B1500A
[Description]
Performs the writing time dependence test of the NAND-type flash memory cell, and plots the accumulated
writing time (accumulated pulse width) vs threshold voltage characteristics. The test is performed as follows.
1. Applies the write pulse with pulse width specified by the first element of the PulseWidth parameter.
2. Measures the Id-Vg characteristics, and extracts the threshold voltage (Vth).
3. Applies the write pulse with pulse width specified by the next element of the PulseWidth parameter.
4. Measures the Id-Vg characteristics, and extracts the threshold voltage (Vth).
5. Repeats 3 and 4 until that the pulse width becomes StopPulseWidth.
[Device Under Test]
NAND-type flash memory cell
[Required Modules and Accessories]
Agilent B1525A SPGU 1 unit
Selector (16440A/16445A 1 set or HRSMU/ASU 1 set)
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, constant voltage output
Source: SMU connected to Source terminal, constant voltage output
Pgate: SPGU channel connected to Gate terminal via Selector
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
Vd: Drain voltage
Id@Vth: Drain current to decide the Vth
IntegTime: Integration time
PulseDelay: Write pulse delay
PulseWidth: List of write pulse width
StopPulseWidth: Pulse width to stop testing
Vwrite: Write pulse output level
LeadingTime: Pulse leading edge transition time
TrailingTime: Pulse trailing edge transition time
[Extended Test Parameters]
Vs: Source voltage
IgLimit: Gate current compliance
HoldTime: Hold time
DelayTime: Delay time
Agilent EasyEXPERT Application Library Reference, Edition 8
6-43