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20 GaN Diode
20.1 Diode Current Collapse IV-t Sampling: GaN Diode Current Collapse
characteristics (using N1267A) (A.05.02)
[Supported Analyzer]
B1505A
[Description]
Measures Current Collapse of GaN Diode.
On state current, voltage and resistance after off state are sampled using N1267A.
[Device Under Test]
GaN Diode, 3 terminals
[Device Parameters]
Temp: Temperature
RAxisMin: Y axis (R) minimum value
RAxisMax: Y axis (R) maximum value
VAxisMin: Y axis (V) minimum value
VAxisMax: Y axis (V) maximum value
IAxisMin: Y axis (I) minimum value
IAxisMax: Y axis (I) maximum value
[Test Parameters]
Memo: Memorandum
GNDU: GNDU connected to N1267A GNDU input
HVSMU: HVSMU connected to N1267A HVSMU input
HCSMU: HCSMU connected to N1267A HCSMU input
SwitchControl: MCSMU connected to N1267A Switch Control
Substrate: SMU/GNDU connected to Substrate
VOff: Cathode voltage applied while off state
VOn: Cathode voltage applied while on state (Voltage drops inside of N1267A according to on state current)
IOnLimit: Current compliance for on state
OffStressTime: Duration of VOff application
SamplingInterval: Sampling interval
NumberOfSamples: Number of samples
[Extended Test Parameters]
SamplingMode: Options for linear or log sampling
SamplingStartTime: Time offset from turning DUT on to starting sampling
MaxPlottingTime: Max time of graph X axis for plotting
MeasurementTime: Actural measurement time for a sample (effective in case of 2ms or above
SamplingInterval)
IOffLimit: Current compliance for off state
（
AUTO: 8mA for VOff up to 1500V, 4mA for VOff above 3kV
）
VerboseDataStore: Option for saving data of the embedded classic test setup
[Measurement Parameters]
Time: On state time
V_HCSMU: Voltage measured by HCSMU
I_HCSMU: Current measured by HCSMU
V_HVSMU: Voltage measured by HVSMU
I_HVSMU: Current measured by HVSMU
V_SwitchControl: Voltage measured by Switch Control MCSMU
I_SwitchControl: Current measured by Switch Control MCSMU
Agilent EasyEXPERT Application Library Reference, Edition 8
20-3