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6 Memory
6.6 NandFlash2 IV-Erase-IV: NAND flash memory cell Id-Vg, Erase, Id-Vg
(A.01.20)
[Supported Analyzer]
B1500A
[Description]
Measures the Id-Vg characteristics of NAND-type flash memory cell, performs the data erase operation,
measures the Id-Vg characteristics again, and plots the both Id-Vg characteristics on a graph. Uses pulse
generator (2-output) 1 unit and HRSMU/ASU 2 sets.
Before the Id-Vg measurements, the initial pulse will be applied to the device under test.
[Device Under Test]
NAND-type flash memory cell
Connect the Control Gate to a SMU and the Drain to the ASU1 Output.
Open the Floating Gate. And connect the other terminals to the ASU2 Output.
[Required Modules and Accessories]
Agilent 81110A pulse generator (2-output, PGU1 and PGU2) 1 unit
HRSMU/ASU 2 sets (ASU1 and ASU2)
ASU1 connections: Output: Drain, SMU: HRSMU, AUX: PGU1
ASU2 connections: Output: Source and Substrate, SMU: HRSMU, AUX: PGU1
Setting of ASU I/O Path, ASU tab, Configuration window: AUX
PGU1 is connected to keep the setup for the data write operation.
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
IntegTime: Integration time
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, constant voltage output
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
Vd: Drain voltage
Id@Vth: Drain current to decide the Vth
Source: SMU connected to Source and Substrate terminals, constant voltage output
PulsePeriod: Erase pulse period
PulseDelay: Erase pulse delay
PulseWidth: Erase pulse width
LeadingTime: Pulse leading edge transition time
TrailingTime: Pulse trailing edge transition time
Verase: Erase pulse output level
[Extended Test Parameters]
IgLimit: Gate current compliance
HoldTime: Hold time
Agilent EasyEXPERT Application Library Reference, Edition 8
6-15