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27 PowerMOSFET, PMIC, SiC
27.12
Vds-Vgs: Vds-Vgs characteristics, Rds-Vgs characteristics, SMU Pulse
(A.05.00)
[Supported Analyzer]
B1505A
[Description]
Measures Vds-Vgs characteristics. SMU pulse is used for the Drain current output.
[Device Under Test]
Power MOSFET, 3 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Temp: Temperature
[Test Parameters]
Memo: Memorandum
Gate: SMU connected to Gate terminal, primary sweep voltage output
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
PulsePeriodMode: Pluse period mode, AUTO or MANUAL
ManualPulsePeriod: Pulse period, effective if PulsePeriodMode=MANUAL
PulseWidth: Pulse width
Drain: SMU connected to Drain terminal, secondary sweep current output
IdStart: Sweep start current for Drain terminal
IdStep: Sweep current step for Drain terminal
IdPoint: Number of Drain current sweep steps
Source: GNDU connected to Source terminal
VdLimit: Drain voltage compliance
PdLimit: Drain power compliance
[Extended Test Parameters]
PulseBase: Pulse base current
PulseAvgCnt: Pulse averaging count
IgLimit: Gate current compliance
VdStop: Sweep stop Drain voltage (applicable to UHCU/HVMCU/UHVU)
HoldTime: Hold time
MeasurementTime: Actural measurement time for a pulse period
VdsScale: Graph scale option for Vds
VdsZero: Log scale minimum value for Vds
RdsScale: Graph scale option for Rds
RdsZero: Log scale minimum value for Rds
RdsMax: Scale maximum value for Rds
[Measurement Parameters]
Drain voltage Vds
Gate current Ig
Drain-Source resistance Rds
[User Function]
Ta: Temperature Ta=Temp
Agilent EasyEXPERT Application Library Reference, Edition 8
27-25
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...