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25 PowerBJT
25.6
Vce(sat)-Ic: Vce(sat)-Ic characteristics (A.05.00)
[Supported Analyzer]
B1505A
[Description]
Measures Vce(sat)-Ic and Vbe(sat)-Ic characteristics. SMU pulse is used for Collector current output and Base
current output.
[Device Under Test]
Power BJT, 3 terminals
[Device Parameters]
Polarity: NPN (SMUs force the specified value) or PNP (SMUs force the negative specified value).
Temp: Temperature
[Test Parameters]
Memo: Memorandum
Scale: Scale of sweep, LINEAR, LOG10, LOG25, or LOG50
Collector: SMU connected to Collector terminal, primary sweep current output
IcIbRatio: Ratio between Collector current and Base current (Ibase=Icollector/IcIbRatio)
IcStart: Sweep start current for Collector terminal
IcStop: Sweep stop current for Collector terminal
IcLinearStep: Sweep step current for Collector terminal, effective if Scale=LINEAR
PulsePeriodMode: Pluse period mode, AUTO or MANUAL
ManualPulsePeriod: Pulse period, effective if PulsePeriodMode=MANUAL
IcPulseWidth: Pulse width of Collector current
IbPulseWidth: Pulse width of Base current
Base: SMU connection to Base terminal, synchronous sweep current output
Emitter: GNDU connected to Emitter terminal
VcLimit: Collector voltage compliance
[Extended Test Parameters]
IcPulseBase: Pulse base current for Collector terminal
IbPulseBase: Pulse base current for Base terminal
PulseAvgCnt: Pulse averaging count
HoldTime: Hold time
IcPulseDelayTime: Delay time of Collector current pulse
IbPulseDelayTime: Delay time of Base current pulse
VbLimit: Base voltage compliance
VcStop: Sweep stop Collector voltage (applicable to UHCU/HVMCU/UHVU)
VcZero: Y1 axis (Vcollector) minimum value
VbZero: Y2 axis (Vbase) minimum value
MeasurementTime: Actural measurement time for a pulse period
[Measurement Parameters]
Collector voltage Vcollector
Collector current Icollector
Base voltage Vbase
Base current Ibase
[User Function]
Ta: Temperature Ta=Temp
Agilent EasyEXPERT Application Library Reference, Edition 8
25-10
Содержание EasyEXPERT
Страница 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Страница 17: ...1 BJT ...
Страница 63: ...2 CMOS ...
Страница 119: ...3 Discrete ...
Страница 127: ...4 GenericTest ...
Страница 133: ...5 MCSMU_IV ...
Страница 141: ...6 Memory ...
Страница 211: ...7 MixedSignal ...
Страница 249: ...8 NanoTech ...
Страница 265: ...9 Organic ...
Страница 269: ...10 PwrDevice ...
Страница 285: ...11 Reliability ...
Страница 377: ...12 Sample ...
Страница 381: ...13 Solar Cell ...
Страница 401: ...14 SPGU_PLSDIV ...
Страница 409: ...15 Structure ...
Страница 459: ...16 TFT ...
Страница 463: ...17 Utility ...
Страница 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Страница 479: ...18 WGFMU ...
Страница 493: ...19 WGFMU_IV ...
Страница 497: ...19 WGFMU_IV Id Drain current Vg gate voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 5 ...
Страница 501: ...19 WGFMU_IV Id Drain current Vd Drain voltage Agilent EasyEXPERT Application Library Reference Edition 8 19 9 ...
Страница 505: ...20 GaN Diode ...
Страница 511: ...21 GaN FET ...
Страница 523: ...22 IGBT ...
Страница 549: ...23 Interconnection ...
Страница 553: ...24 MISCAP ...
Страница 561: ...25 PowerBJT ...
Страница 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Страница 577: ...26 PowerDiode ...
Страница 585: ...27 PowerMOSFET PMIC SiC ...