Agilent Technologies EasyEXPERT, Руководство пользователя, Страница: 142 / 610

6 Memory
1.
Flash Ccf-V: Flash memory cell Control Gate to Floating Gate capacitance (A.01.11)
2. Flash Cfb-V: Flash memory cell Floating Gate-Substrate capacitance (A.01.11)
3.
Flash Cgg-Vcg: Flash memory cell Gate capacitance (A.01.11)
4.
NandFlash2 Endurance 3devices:
Repeatedly tests write/erase on a NAND-type flash memory cell,
simultaneously using three devices (A.01.20).
5.
NandFlash2 Endurance: NAND flash memory cell endurance test (A.01.20)
6. NandFlash2 IV-Erase-IV: NAND flash memory cell Id-Vg, Erase, Id-Vg (A.01.20)
7. NandFlash2 IV-Write-IV: NAND flash memory cell Id-Vg, Write, Id-Vg (A.01.20)
8. NandFlash2 Retention(ErasedCell):
NAND flash memory cell Data retention test after Erase (A.01.20)
9.
NandFlash2 Retention(WrittenCell):
NAND flash memory cell Data retention test after Write (A.01.20)
10.
NandFlash2 Vth(ErasingTimeDependence):
NAND flash memory cell erasing time dependence test (A.01.20)
11.
NandFlash2 Vth(WritingTimeDependence):
NAND flash memory cell writing time dependence test (A.01.20)
12. NandFlash2 WordDisturb(ErasedCell):
NAND flash memory cell erase-disturb test (A.01.20)
13. NandFlash2 WordDisturb(WrittenCell):
NAND flash memory cell read-disturb test (A.01.20)
14.
NandFlash3 Endurance: NAND flash memory cell endurance test (A.03.10)
15.
NandFlash3 IV-Erase-IV: NAND flash memory cell Id-Vg, Erase, Id-Vg (A.03.10)
16.
NandFlash3 IV-Write-IV: NAND flash memory cell Id-Vg, Write, Id-Vg (A.03.10)
17.
NandFlash3 Retention(ErasedCell):
NAND flash memory cell Data retention test after Erase (A.03.10)
18. NandFlash3 Retention(WrittenCell):
NAND flash memory cell Data retention test after Write (A.03.10)
19.
NandFlash3 Vth(ErasingTimeDependence):
NAND flash memory cell erasing time dependence test (A.03.10)
20.
NandFlash3 Vth(WritingTimeDependence):
NAND flash memory cell writing time dependence test (A.03.10)
21.
NandFlash3 WordDisturb(ErasedCell):
NAND flash memory cell erase-disturb test (A.03.10)
22. NandFlash3 WordDisturb(WrittenCell):
NAND flash memory cell read-disturb test (A.03.10)
23. NorFlash Endurance: NOR flash memory cell endurance test (A.03.10)
24. NorFlash IV-Erase-IV: NOR flash memory cell Id-Vg, Erase, Id-Vg (A.03.10)
25.
NorFlash IV-Write-IV: NOR flash memory cell Id-Vg, Write, Id-Vg (A.03.10)
26.
NorFlash Retention(ErasedCell):
NOR flash memory cell Data retention test after Erase (A.03.10)
27.
NorFlash Retention(WrittenCell):
NOR flash memory cell Data retention test after Write (A.03.10)
28. NorFlash Vth(ErasingTimeDependence):
NOR flash memory cell erasing time dependence test (A.03.10)
29. NorFlash Vth(WritingTimeDependence):
NOR flash memory cell writing time dependence test (A.03.10)
30.
NorFlash WordDisturb(ErasedCell):
NOR flash memory cell word disturb test after Erase (A.03.10)
31.
NorFlash WordDisturb(WrittenCell):
NOR flash memory cell word disturb test after Write (A.03.10)
32.
NorFlash DataDisturb(ErasedCell):
NOR flash memory cell data disturb test after Erase (A.03.10)
Agilent EasyEXPERT Application Library Reference, Edition 8
6-2