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21 GaN FET
21.5 Id-Vds Current Collapse: GaN FET Current Collapse characteristics (using
N1267A) (A.05.02)
[Supported Analyzer]
B1505A
[Description]
Measures Current Collapse of GaN FET.
Id-Vds in on state is measured after applying off stress using N1267A.
[Device Under Test]
GaN FET, 4 terminals
[Device Parameters]
Temp: Temperature
XAxisVdsMin: X axis (Vds) minimum value
XAxisVdsMax: X axis (Vds) maximum value
YAxisIdMin: Y axis (Id) minimum value
YAxisIdMax: Y axis (Id) maximum value
[Test Parameters]
Memo: Memorandum
GNDU: GNDU connected to N1267A GNDU input
HVSMU: HVSMU connected to N1267A HVSMU input
HCSMU: HCSMU connected to N1267A HCSMU input
SwitchControl: MCSMU connected to N1267A Switch Control
Gate: MCSMU/HCSMU connected to Gate terminal
Substrate: SMU/GNDU connected to Substrate
VgOff: Gate off voltage
VgOn: Gate on voltage
VdOff: Drain voltage applied while off state
VdStart: Start value of drain voltage sweep for on state (Voltage drops inside of N1267A according to on state
current)
VdStop: Stop value of drain voltage sweep for on state (Voltage drops inside of N1267A according to on state
current)
IdOnLimit: Drain current compliance for on state
OffStressTime: Duration of VdOff application
StepTime: Step time of drain voltage sweep
NOS: Number of steps of drain voltage sweep
[Extended Test Parameters]
IgLimit: Gate current compliance
IdOffLimit: Drain current compliance for off state
（
AUTO: 8mA for VdOff up to 1500V, 4mA for VdOff
above 3kV
）
MeasurementTime: Actural measurement time for each step of drain voltage sweep
DischargingSwitchControl: Option for discharging by N1267A internal switch (for the case of on state current
less than IdOffLimit)
IdOffMonitor: Option for measurement of drain current in off state
VerboseDataStore: Option for saving data of the embedded classic test setup
[Measurement Parameters]
V_HCSMU: Voltage measured by HCSMU
I_HCSMU: Current measured by HCSMU
Agilent EasyEXPERT Application Library Reference, Edition 8
21-11