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15 Structure
15.1 BVgb ThinOx: MOS capacitor Ig-Vg characteristics (A.01.20)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Extracts the gate current vs gate voltage (Ig-Vg) characteristics of MOS capacitor which has an ultra thin gate
insulator. The primary sweep channel applies the quasi-pulsed voltage to Gate terminal, and measures Gate
current at both pulse base and peak. The measurements are repeated ABS(VgStop-VgStart)/VgStep times to
extract the Ig-Vg characteristics. The pulse base value is the primary sweep start value and can be set by the
VgLow parameter. The pulse peak value is the primary sweep stop value and corresponds to Vg.
[Device Under Test]
MOS capacitor
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
Gate: SMU connected to Gate, primary sweep voltage output
VgStart: Pulse peak start value
VgStop: Pulse peak stop value
VgStep: Pulse peak step value
VgLow: Pulse base value, primary sweep start value
IgLimit: Gate current compliance
Subs: SMU connected to Substrate, constant voltage output
Vsubs: Substrate voltage
VgStart, VgStop, VgStep values are used to calculate the primary sweep stop value.
[Extended Test Parameters]
HoldTime: Hold time
DelayTime: Delay time
GateMinRng: Minimum range for the gate current measurement
SubsMinRng: Minimum range for the substrate current measurement
[Measurement Parameters]
Gate current Igate
Substrate current Isubs
[User Function]
Gate current per Gate unit area IgatePerArea=Igate/Lg/Wg
Substrate current per Gate unit area IsubsPerArea=Isubs/Lg/Wg
[Calculation After Measurement]
Buffer=getVectorData("Vgate")
V_gate=storeAt(Vgate,I,1,at(Buffer,2,1))
Buffer=getVectorData("Igate")
I_gate=storeAt(Igate,I,1,at(Buffer,2,1))
I_gate@LowVg=storeAt(Igate,I,1,at(Buffer,1,1))
Agilent EasyEXPERT Application Library Reference, Edition 8
15-3