RX610 Group
26. ROM (Flash Memory for Code Storage)
R01UH0032EJ0120 Rev.1.20
Page 860 of 1006
Feb 20, 2013
Write E8h to ROM programming/
erasure address in byte access
Write 80h to ROM programming/
erasure address in byte access
Write programming data to start
address of programming destination in
word access
n = 1
n = n + 1
Write programming data to ROM
programming/erasure address in
word access
n = 127?
Write D0h to ROM programming/
erasure address in byte access
FRDY bit check
Timeout
(tP256
×
1.1)
*
FCU initialization
FRESETR.FRESET = 1
writing
ILGLERR bit and PRGERR bit check
Wait
(tRESW2)
*
FRESETR.FRESET = 0
writing
Note:
*
tP256: Programming time for 256-byte data (see section 29, Electrical Characteristics)
tRESW2: Reset pulse width during programming/erasure (see section 29, Electrical Characteristics)
No
Yes
No
Yes
"0"
"1"
Start
End
Figure 26.14 Procedure for ROM Programming
Summary of Contents for RX600 Series
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