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User’s Manual U16702EE3V2UD00
Chapter 21
Flash Memory
The following products are the flash memory versions of the V850E/RS1.
Caution:
There are differences in the amount of noise tolerance and noise radiation between
flash memory versions and mask ROM versions. When considering changing from a
flash memory version to a mask ROM version during the process from experimental
manufacturing to mass production, make sure to sufficiently evaluate commercial
samples (CS) (not engineering samples (ES)) of the mask ROM versions.
•
µPD70F3403 and µPD70F3403A
On-chip 256 KB flash memory
•
µPD70F3402
On-chip 128 KB flash memory
In the instruction fetch to this flash memory, 4 bytes can be accessed by a single clock, the same as in
the mask ROM version.
The flash memory can be written mounted on the target board (on-board write), by connecting a dedi-
cated flash programmer to the target system.
Flash memory is commonly used in the following development environments and applications.
•
For altering software after solder-mounting the V850E/RS1 on the target system
•
For differentiating software in small-scale production of various models.
•
For data adjustment when starting mass production
21.1 Features
•
4-byte/1-clock access (in instruction fetch access)
•
Chip erase/block unit erase
•
Communication via serial interface with the dedicated flash programmer
•
Erase/write voltage: Can be erased/written with a single power supply
(FLMD0 = V
DD
, FLMD1 = V
SS
).
•
On-board programming
•
Flash memory programming by self-writing
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